Electronic properties of curved graphene sheets

Maria A. H. Vozmediano

Ingenieria y Ciencia de Materiales, Universidad Carlos III de Madrid , Spain

Defects play a key role in the electronic structure graphene layers flat or curved. Topological defects in which an hexagon is replaced by an n-sided polygon generate long range interactions that make them different from vacancies or other potential defects. In this talk we review previous models for topological defects in graphene. A formalism is proposed to study the electronic and transport properties of graphene sheets with corrugations as the one recently synthesized. The formalism is based on coupling the Dirac equation that models the low energy electronic excitations of clean flat graphene samples to a curved space. A cosmic string analogy allows to treat an arbitrary number of topological defects located at arbitrary positions on the graphene plane. The usual defects that will always be present in any graphene sample as pentagon-heptagon pairs and Stone-Wales defects are studied as an example. The local density of states around the defects acquires characteristic modulations that could be observed in scanning tunnel and transmission electron microscopy.