1/f noise in hopping conduction: Role of multi-site aggregates

Yuri M. Galperin

University of Oslo, Norway, and A.F.Ioffe Physico-Technical Institute, St. Petersburg, Russia

(in collaboration with A. L. Burin, V. I. Kozub, B. I. Shklovskii, and V. Vinokur)

The problem of 1/f-type noise in hopping insulators is revisited. We have developed a model for low-frequency noise based upon consideration of specially selected aggregates of localized states. The noise is due to multi-electron hops between the sites within an aggregate. The low-frequency cut-off in the 1/f-type spectrum is discussed.