(in collaboration with A. L. Burin, V. I. Kozub, B. I. Shklovskii, and V. Vinokur)
The problem of 1/f-type noise in hopping insulators is revisited. We have developed a model for low-frequency noise based upon consideration of specially selected aggregates of localized states. The noise is due to multi-electron hops between the sites within an aggregate. The low-frequency cut-off in the 1/f-type spectrum is discussed.