| Electronic structure of correlated rare-earth originating nano-materials is studied by means of high-resolution angle-resolved photoemission. Thin films of Ce-based compounds (i.e. CePd3 and CeSi2) reveal strong momentum (k) dependent splittings of the 4f emissions around the expected intersection points of the 4f final states with valence bands in the Brillouin zone. The obtained dispersion of the interacting 4f states is explained in terms of a simplified periodic Anderson model (PAM) by a k dependence of the electron hopping matrix element disregarding clearly interpretation in terms of a single-impurity Anderson model (SIAM) for single-crystalline samples. In the monolayer regime, the electronic structure of supported rare-earth structures [i.e. Ce and Yb monolayers on W(110)] can only be understood if in addition to PAM, symmetry-dependent hybridization with electronic states of substrates will be considered. In the case of strongly interacted one-dimensional f-systems like Dy- or Gd-derived nanowaries on stepped surfaces of Si, single-particle hybridization takes priority over correlation phenomena resulting basically in one-dimensional metallic properties of the vicinal nano-materials. |
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