Gating charge effects: An intrinsic mechanism for channel noise reduction

Gerhard Schmid

Universität Augsburg, Institut für Physik, Augsburg, Germany

Within generalizations of the archetypical Hodgkin-Huxley modelling we investigate the influence of intrinsic properties of ion channels on the spiking activity of neuronal membrane patches. Channel noise which stems from the randomness of ion channel gating causes spontaneous spiking and synchronization effects as Stochastic Resonance or Coherence Resonance. The random switching of voltage-gated ion channels between open and closed configurations is connected with motion of gating charge within the cell membrane. Taking gating charges into account we found a drastically reduced spontaneous spiking activity. Consequently, this demonstrates a prominent intrinsic mechanism for channel noise reduction. This effective reduction of intrinsic noise could be observed within the effects of Coherence and Stochastic Resonance.

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