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Scanning tunneling microscopy (STM) allows us to examine electronic properties of systems with atomic resolution. In particular, STM can be used to determine the interactions between surface layer magnetic impurities implanted into a semiconductor surface. Using the method described by Kitchen et al. [Nature, 2006], we substitute Mn atoms for Ga into the surface layer of p-GaAs(110). With reasonable coverage of Mn, specifically oriented dimers and larger collections can be formed. Further, the local electric field of the surface can be tuned by the manipulation of charged As vacancies and Mn and Ga adatoms [Lee and Gupta, Science, 2010]. This allows us to examine the field-dependence of the acceptor-level splitting in these Mn clusters.
Funding for this research was provided by the Center for Emergent Materials at the Ohio State University, an NSF MRSEC (Award Number DMR-0820414). |
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