| Based on first principles calculations, we propose a solubility control method of magnetic impurities in dilute magnetic semiconductors (DMSs). The low solubility of Mn in (Ga,Mn)As is experimentally and theoretically known. We show that donor atoms, such as Li, introduced at the interstitial sites in GaAs enhance the solubility of Mn. As a result, Mn can be doped to more than 20% in GaAs in the thermal equilibrium condition. The same effect can be seen when we dope Mn in GaAs and other kind of host semiconductors with other interstitial donors, such as H, Na, K, Be, Mg, Ca, Cu, and Ag. |
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